2001. 2. 24 1/3 semiconductor technical data ktc3911s epitaxial planar npn transistor revision no : 3 low noise amplifier application. features h high voltage : v ceo =120v. h excellent h fe linearity : h fe (0.1ma)/h fe (2ma)=0.95(typ.). h high h fe : h fe =200 q 700. h low noise : nf=1db(typ.), 10db(max.). h complementary to kta1517s. maximum rating (ta=25 ? ) dim millimeters sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.40+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 q 0.1 max 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ q 1. emitter 2. base 3. collector electrical characteristics (ta=25 ? ) note : h fe classification gr(g):200 q 400 bl(l):350 q 700 h rank type name marking lot no. ad fe characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =120v, i e =0 - - 0.1 a emitter cut-off current i ebo v eb =5v, i c =0 - - 0.1 a dc current gain h fe (note) v ce =6v, i c =2ma 200 - 700 collector-emitter saturation voltage v ce(sat) i c =10ma, i b =1ma - - 0.3 v transition frequency f t v ce =6v, i c =1ma - 100 - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 4.0 - pf noise figure nf v ce =6v, i c =0.1ma f=1khz, rg=10k ? - 1.0 10 db characteristic symbol rating unit collector-base voltage v cbo 120 v collector-emitter voltage v ceo 120 v emitter-base voltage v ebo 5v collector current i c 100 ma base current i b 20 ma collector power dissipation p c 150 mw junction temperature t j 150 ? storage temperature range t stg -55 q 150 ?
2001. 2. 24 2/3 ktc3911s revision no : 3
2001. 2. 24 3/3 ktc3911s revision no : 3
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